CY14B101LA-SZ25XI

Data Sheet

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CY14B101LA-SZ25XI
CY14B101LA-SZ25XI
Data Sheet

Product details

  • Density
    1024 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    25 ns
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14B101LA-SZ25XI is a 1-Mbit nvSRAM (128 K × 8) with QuantumTrap nonvolatile storage in each SRAM cell. It operates from a single 2.7 V to 3.6 V supply over -40°C to +85°C, with 20-year data retention and 1,000 K STORE endurance. Automatic STORE on power-down uses an external VCAP capacitor (61 µF to 180 µF); STORE/RECALL can also be initiated by software or the HSB pin. 25 ns access, 32-pin SOIC.

Features

  • QuantumTrap nvSRAM architecture
  • 1-Mbit SRAM with nonvolatile store
  • AutoStore on power-down via VCAP
  • STORE via HSB pin or software seq
  • RECALL via power-up or software seq
  • tSTORE max 8 ms
  • tHRECALL max 20 ms
  • tRECALL max 200 µs
  • VCC 2.7 V to 3.6 V
  • Data retention 20 years
  • 1,000 K nonvolatile STORE cycles
  • Low-VCC inhibit below 2.65 V

Benefits

  • Keeps data on sudden power loss
  • Cuts firmware for NVM management
  • Fast restore after power returns
  • Supports both HW and SW control
  • Predictable save time (8 ms max)
  • Predictable boot recall (20 ms)
  • No write corruption in brownouts
  • 3 V supply fits common logic rails
  • 20-year retention suits logging
  • 1M STORES supports frequent saves
  • Infinite SRAM R/W for high traffic
  • Busy flag (HSB) simplifies timing

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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