BSZ120P03NS3E G

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
Data Sheet

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BSZ120P03NS3E G
BSZ120P03NS3E G
Data Sheet

Product details

  • Ciss
    2240 pF
  • Coss
    1090 pF
  • ID max
    -40 A
  • IDpuls max
    -160 A
  • Package
    PQFN 3.3 x 3.3
  • Ptot max
    52 W
  • QG
    30 nC
  • RDS (on) max
    12 mΩ
  • Rth
    2.4 K/W
  • VDS max
    -30 V
  • VGS(th)
    -3.1 V to -1.9 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Normal level, logic level or super logic level
  • Avalanche rated
  • Pb-free lead plating
  • RoHS compliant 

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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