Active and preferred
RoHS Compliant
Lead-free

BSD223P

P-channel enhancement mode Field-Effect Transistor (FET), -20V, SOT-363
Data Sheet
package
ea.
in stock

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BSD223P
BSD223P
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.05
  • Ciss
    45 pF
  • Coss
    21 pF
  • ID (@25°C) max
    0.39 A
  • IDpuls max
    -1.56 A
  • Mode
    Enhancement
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SOT-363
  • Pin Count
    6 Pins
  • Polarity
    P+P
  • Ptot max
    0.25 W
  • QG
    -0.5 nC
  • RDS (on) (@2.5V) max
    2100 mΩ
  • RDS (on) (@4.5V) max
    1200 mΩ
  • RDS (on) (@4.5V LL) max
    1200 mΩ
  • Rth
    500 K/W
  • Special Features
    Dual
  • VDS max
    -20 V
  • VGS(th) min
    -0.6 V
  • VGS(th)
    -0.9 V
  • VGS(th) max
    -1.2 V
Recommended
OPN
BSD223PH6327XTSA1
Product Status active and preferred
Infineon Package
PG-SOT363-6
Package Name SOT-363
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-SOT363-6
Package Name SOT-363
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Super logic level
  • Avalanche rated
  • Fast switching
  • dv/dt rated
Pb-free lead-plating
  • RoHS compliant, Halogen-free
  • Quflified according to AEC Q101

    • Benefits

    • Low RDS(on) for high efficency
    • Small packages save PCB space
    • Best-in-class quality and reliability

    Applications

    Documents

    Documents

    Design resources

    Partner solutions

    Developer community

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