Active
RoHS Compliant
Lead-free

BSB165N15NZ3 G

Data Sheet
package

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BSB165N15NZ3 G
BSB165N15NZ3 G
Data Sheet

Product details

  • Budgetary Price €/1k
    1.04, 1.04
  • Ciss
    2100 pF
  • Coss
    240 pF
  • ID (@25°C) max
    45 A
  • IDpuls max
    180 A
  • Micro-stencil
    IRF66MZ-25
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    DirectFET (M)
  • Polarity
    N
  • Ptot max
    78 W
  • QG (typ @10V)
    26 nC
  • RDS (on) (@10V) max
    16.5 mΩ
  • Rth
    1.6 K/W
  • VDS max
    150 V
  • VGS(th)
    3 V
Recommended
OPN
BSB165N15NZ3GXUMA3 BSB165N15NZ3GXUMA2
Product Status active active
Infineon Package
MG-WDSON-5
MG-WDSON-5
Package Name N/A N/A
Packing Size 4800 5000
Packing Type TAPE & REEL TAPE & REEL
Moisture Level 3 3
Moisture Packing DRY DRY
Lead-free Yes Yes
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
MG-WDSON-5
Package Name -
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant

Product Status
Active
Infineon Package MG-WDSON-5
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Low Q g and Q gd
  • Excellent gate charge
  • RoHS compliant-halogen free
  • MSL1 rated

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
Easy-to-design products23

Documents

Documents

Design resources

Partner solutions

Developer community

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