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BSB056N10NN3 G
Product details
-
Budgetary Price €/1k1.11, 1.11
-
Ciss4100 pF
-
Coss750 pF
-
ID (@25°C) max83 A
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IDpuls max332 A
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Micro-stencilIRF66MN-25
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Operating Temperature range-40 °C to 150 °C
-
PackageDirectFET (M)
-
PolarityN
-
Ptot max78 W
-
QG (typ @10V)56 nC
-
RDS (on) (@10V) max5.6 mΩ
-
Rth1.6 K/W
-
VDS max100 V
-
VGS(th) range2 V to 3.5 V
-
VGS(th)2.7 V
| Recommended | ||||
|
OPN
|
BSB056N10NN3GXUMA3 | BSB056N10NN3GXUMA2 | ||
| Product Status | active | active | ||
| Infineon Package | MG-WDSON-5 | |||
| Package Name | N/A | N/A | ||
| Packing Size | 4800 | 5000 | ||
| Packing Type | TAPE & REEL | TAPE & REEL | ||
| Moisture Level | 3 | 3 | ||
| Moisture Packing | DRY | DRY | ||
| Lead-free | Yes | Yes | ||
| Halogen Free | Yes | Yes | ||
| RoHS Compliant | Yes | Yes | ||
|
Infineon stock last updated:
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in stock
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| Product Status |
Active
|
|---|---|
| Infineon Package | |
| Package Name | - |
| Packing Size | 4800 |
| Packing Type | TAPE & REEL |
| Moisture Level | 3 |
| Moisture Packing | DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
| Product Status |
Active
|
|---|---|
| Infineon Package | MG-WDSON-5 |
| Package Name | - |
| Packing Size | 5000 |
| Packing Type | TAPE & REEL |
| Moisture Level | 3 |
| Moisture Packing | DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Features
- Excellent switching performance
- World’s lowest R DS(on)
- Low Q g and Q gd
- Excellent gate charge
- RoHS compliant-halogen free
- MSL1 rated
Benefits
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
Applications
Documents
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