Active and preferred
RoHS Compliant
Lead-free

BGAP3D30H

High-Power Pre-Drivers for Wireless Infrastructure
ea.
in stock

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BGAP3D30H
BGAP3D30H
ea.

Product details

  • ACLR
    -47 dBc
  • Frequency Range
    3.1 GHz to 4.2 GHz
  • Gain Flatness max
    0.35 dB
  • Gain
    38.5 dB
  • Noise Figure
    3.3 dB
  • OIP3
    41.1 dBm
  • OP1dB
    31.4 dBm
  • Supply Voltage
    5 V
OPN
BGAP3D30HE6327XUMA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA P3D30H is a 3.1 to 4.2 GHz mid-band SiGe RF driver amplifier optimized for 5G massive MIMO base stations and small cells. It provides a high OP1dB of 31 dBm and features single-ended, internally matched 50 Ω in-/output. With high linearity, gain flatness of <0.35 dB, and excellent RF performance can serve as a pre-driver or power amplifier. This device is suited for improving linearization in driven power amplifiers for low-power applications.

Features

  • Supply voltage: 3.3 V
  • Gain Flatness: 0.35 dB
  • High Gain: 38.5 dB
  • High OP1dB: 31 dBm
  • Mid-band: 3.1 - 4.2GHz
  • Packaging: QFN

Benefits

  • BiCMOS tech for optimized performance
  • High gain and power, reducing components
  • Wide BW 3.1-4.2 GHz with gain flatness
  • Matched to 50 Ω, no external matching
  • Turnable linearity performance

Applications

Documents

Design resources

Developer community

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