Active and preferred
RoHS Compliant
Lead-free

BGA7H1BN6

Data Sheet
package
ea.
in stock

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BGA7H1BN6
BGA7H1BN6
ea.
Data Sheet

Product details

  • Frequency
    1805-2200 MHz
  • Gain
    12.3 dB
  • I
    4.3 mA
  • IIP3
    2 dBm
  • NF
    0.85 dB
  • P-1dB (in)
    -3 dBm
  • VCC operating
    1.5 V to 3.6 V
Recommended
OPN
BGA7H1BN6E6327XTSA1
Product Status active and preferred
Infineon Package
TSNP-6-2
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
TSNP-6-2
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc

Features

  • Insertion power gain: 12.3 dB
  • Low noise figure: 0.85 dB
  • Low current consumption: 4.3 mA
  • Insertion loss in bypass mode: -3.1 dB
  • Operating frequencies: 1805 - 2690 MHz
  • Two-state control: Bypass- and high gain-mode
  • Supply voltage: 1.5 V to 3.6 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • Pb-free (RoHS compliant) package

Documents

Documents

Design resources

Partner solutions

Developer community

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