not for new design
RoHS Compliant
Lead-free

BGA5H1BN6

Data Sheet
package
ea.
in stock

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BGA5H1BN6
BGA5H1BN6
ea.
Data Sheet

Product details

  • Frequency
    2300 - 2690 MHz
  • Gain
    18.1 dB
  • I
    8.5 mA
  • IIP3
    -7 dBm
  • NF
    0.7 dB
  • P-1dB (in)
    -17 dBm
  • VCC operating
    1.5 V to 3.6 V
OPN
BGA5H1BN6E6327XTSA1
Product Status not for new design
Infineon Package
TSNP-6-10
Package Name N/A
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
TSNP-6-10
Package Name -
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB.The BGA5H1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

Features

  • Operating frequencies: 2300 - 2690 MHz
  • Insertion power gain: 18.1 dB
  • Insertion Loss in bypass mode: 5.2 dB
  • Low noise figure: 0.7 dB
  • Low current consumption: 8.5 mA
  • Multi-state control: bypass- and high gain-mode
  • Ultra small TSNP-6-2 and TSNP-6-10 leadless package
  • RF output internally matched to 50 Ohm
  • Low external component count

Documents

Documents

Design resources

Partner solutions

Developer community

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