not for new design
RoHS Compliant
Lead-free

BAT24-02LS

ea.
in stock

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BAT24-02LS
BAT24-02LS
ea.

Product details

  • C @VR=0V
    0.2 pF
  • Configuration
    Single
  • IF max
    110 mA
  • VF
    0.25 V
  • VR max
    4 V
OPN
BAT2402LSE6327XTSA1
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz

Features

  • Low inductance LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at 1 MHz
  • TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
  • Pb-free (RoHS compliant) and halogen free

Applications

Documents

Design resources

Developer community

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