AUIRF7342Q

-55 V, Dual P-Ch, 105 mΩ max, Automotive MOSFET, SO8, Gen 5
Data Sheet

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AUIRF7342Q
AUIRF7342Q
Data Sheet

Product details

  • ID (@25°C) max
    -3.4 A
  • Moisture Sensitivity Level
    1
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SO8
  • Polarity
    P+P
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    8.4 nC
  • QG (typ @10V) max
    38 nC
  • QG (typ @10V)
    26 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    105 mΩ
  • RthJA max
    62.5 K/W
  • Technology
    Gen 5
  • Tj max
    150 °C
  • VDS max
    -55 V
  • VGS(th) min
    -1 V
  • VGS(th) max
    -3 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • Advanced planar technology
  • Low on resistance
  • Logic level gate drive
  • Dynamic dV/dT rating
  • 150°C operating temperature
  • Fast switching
  • Fully Avalanche Rated
  • Lead free, RoHS compliant
  • Automotive qualified
  • PPAP Capable Device

Documents

Documents

Design resources

Partner solutions

Developer community

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