Active and preferred

5962F1120202VXA

Data Sheet
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5962F1120202VXA
5962F1120202VXA
Data Sheet

Product details

  • Architecture
    QDR-II+
  • Bank Switching
    N
  • Burst Length (Words)
    4
  • Data Width
    x 36
  • Density
    72 MBit
  • Device weight
    6152.8 mg
  • ECC
    N
  • Family
    QDR-II+
  • Frequency
    250 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • On-Die Termination
    N
  • Operating Temperature
    -55 °C to 125 °C
  • Operating Voltage
    1.7 V to 1.9 V
  • Organization (X x Y)
    2Mb x 36
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2033
  • Qualification
    Military
  • Read Latency (Cycles)
    2
Recommended
OPN
5962F1120202VXA
Product Status active and preferred
Infineon Package
C-CGA-165
Package Name CCGA-165 (001-58969)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CGA-165
Package Name CCGA-165 (001-58969)
Packing Size 1
Packing Type TRAY
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s 72Mb Quad Data Rate (QDR®)-II+, CYRS154x series, are high performance, synchronous pipelined SRAMs designed with Infineon’s RADSTOP™ technology. The 72Mb QDR®-II+ memories are available in x18/x36 and two-word/four-word data bus configurations, and provides low latency and random memory access capability for high speed cache applications. 

Features

  • 72 Mb density,2M x36 four-word burst mode
  • 250 MHz > freq. / 36 Gbps throughput
  • Two independent unidirectional data port
  • Double Data Rate (DDR) port
  • Output impedance matching input
  • Memory core bit-interleaving
  • 1.7 V to 1.9 V operating V R
  • –55°C to +125°C military temp. grade
  • 165-ceramic CGA (CCGA)
  • SWaP optimized CCGA package

Applications

Documents

Documents

Design resources

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