coming soon
RoHS Compliant
Lead-free

2EDL900G3

EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of Si MOSFETs
Data Sheet

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2EDL900G3
2EDL900G3
Data Sheet

Product details

  • Channels
    2
  • Input Vcc range
    3.8 V to 15 V
  • Output Current max
    4 A
  • Output Voltage range
    0 V to 16 V
  • Qualification
    Industrial
OPN
2EDL900G3XTMA1
Product Status coming soon
Infineon Package PG-TSNP-16
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status coming soon
Infineon Package PG-TSNP-16
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The EiceDRIVER™ 2EDL900G3 is a dual channel level shifter gate driver IC with dual floating outputs to drive silicon MOSFETS. This strong 4 A/6 A source/sink current dual-channel gate driver has an integrated current sense amplifier. It also has a programmable deadtime and mode of operations such as tri-state single PWM mode, HSCC HS mode, HSCC LS mode, Hi/Li inverted mode, and Hi/Li mode. It is available in 16 pins 3x3 mm package.

Features

  • Dual-channel floating output driver
  • Strong 4 A source and 6 A sink current
  • 4 V to 16 V driving capability
  • Configurable deadtime or turn-on delay
  • Integrated current sense amplifier
  • Configurable mode of operations

Benefits

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements

Documents

Documents

Design resources

Partner solutions

Developer community

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