Active and preferred
RoHS Compliant
Lead-free

2EDF5215F

Fast, robust, dual-channel, high side isolated gate driver with accurate and stable timing and high current output
Data Sheet
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2EDF5215F
2EDF5215F
Data Sheet

Product details

  • Channels
    2
  • Configuration
    Half Bridge: High-side and low-side
  • Isolation Type
    High-Side Galvanic isolation - Functional
  • Output Current
    5 A
  • Package
    PG-DSO-8
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    36 ns
  • Turn On Propagation Delay
    38 ns
  • Voltage Class
    250 V
Recommended
OPN
2EDF5215FXUMA1
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name N/A
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name -
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation, makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.

Features

  • 250 V high and low-side gate driver
  • -250 V negative HS transient immunity
  • 100 V/ns dV/dt robustness
  • 5 A / 9 A source / sink capability
  • +9 ns /-5 ns delay accuracy
  • 4 ns max delay matching
  • 1.2 V output clamping threshold in UVLO
  • <2 μs fast start-up time

Benefits

  • High-side channel isolation
  • Flexible: Independent channels
  • robustness against ground noise
  • Great signal synchronization
  • Reliable for high switching frequencies
  • Safe operation during system start-up
  • Optimal operation in bootstrap supply

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