Active
RoHS Compliant
Lead-free

1EDN7126G

EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
Data Sheet
package
board
ea.
in stock

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1EDN7126G
1EDN7126G
ea.
Data Sheet

Product details

  • Channels
    1
  • Configuration
    High-side
  • Isolation Type
    Non-isolated
  • Output Current
    1.5 A
  • Output Current (Sink)
    1.5 A
  • Output Current (Source)
    1.5 A
  • Package
    PG-VSON-10
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    75 ns
  • Turn On Propagation Delay
    75 ns
  • Voltage Class
    200 V
Recommended
OPN
1EDN7126GXTMA1
Product Status active
Infineon Package
PG-VSON-10
Package Name N/A
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VSON-10
Package Name -
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The EiceDRIVER™ 1EDN7126G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 1.5 A peak source and sink current, active Miller clamp, adjustable charge pump, and bootstrap voltage clamp.

Features

  • 200Wx2, 4Ω into 10% THD+N
  • heatsink-less operation at 2x100W
  • 95% efficiency at 2x200W at 4Ω
  • Split or single power supply
  • Differential or single-ended input
  • 2xSE, BTL, PSE (parallel SE)
  • OCP, OTP, and UVLO with reset
  • Start/stop click noise reduction
  • Clip and fault reporting outputs

Applications

Healthcare

Documents

Documents

Design resources

Partner solutions

Developer community

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