Active and preferred
RoHS Compliant
Lead-free

1EDN7116G

EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
Data Sheet
package
board
ea.
in stock

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1EDN7116G
1EDN7116G
ea.
Data Sheet

Product details

  • Channels
    1
  • Configuration
    High-side
  • Isolation Type
    Non-isolated
  • Output Current
    2 A
  • Output Current (Sink)
    2 A
  • Output Current (Source)
    2 A
  • Package
    PG-VSON-10
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    55 ns
  • Turn On Propagation Delay
    55 ns
  • Voltage Class
    200 V
Recommended
OPN
1EDN7116GXTMA1
Product Status active and preferred
Infineon Package
PG-VSON-10
Package Name N/A
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VSON-10
Package Name -
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The EiceDRIVER™ 1EDN7116G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 2 A peak source and sink current, active Miller clamp, adjustable charge pump, and bootstrap voltage clamp.

Features

  • Multi-level switching technology
  • 2×80W peak output power
  • +4V to +26V PVDD
  • 2.0, 2.1, 4.0, 1.0 configurations
  • 4th order feedback error control
  • 160mW Idle power dissipation
  • 80% efficiency at 2W power
  • 91% efficiency at full Power
  • 110dB SNR, AW, 1% THD+N level
  • 140µV output integrated noise (A-w)
  • 0.007% THD+N at high output levels
  • I2C with selectable addresses

Documents

Documents

Design resources

Partner solutions

Developer community

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