Active and preferred
RoHS Compliant
Lead-free

1ED21271S65F

650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)
ea.
in stock

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1ED21271S65F
1ED21271S65F
ea.

Product details

  • Channels
    1
  • Configuration
    High-side
  • Input Vcc
    8 V to 22 V
  • Isolation Type
    Functional levelshift SOI (Silicon On Insulator)
  • Output Current (Source)
    4 A
  • Output Current (Sink)
    4 A
  • Package
    PG-DSO-8
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    55 ns
  • Turn On Propagation Delay
    55 ns
  • VBS UVLO (On)
    7.2 V
  • VBS UVLO (Off)
    6.8 V
  • VCC UVLO (Off)
    6.8 V
  • VCC UVLO (On)
    7.2 V
  • Voltage Class
    650 V
OPN
1ED21271S65FXUMA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
EiceDRIVER™ 650 V high side single channel gate driver IC with a typical 4 A source and 4 A sink current in DSO-8 package for IGBTs, MOSFETs and SiC MOSFETs.

Features

  • Infineon thin-film-SOI-technology
  • Maximum blocking voltage +650 V
  • Output source/sink current +4 A/ -4 A
  • Maximum supply voltage of 25 V
  • Integrated Bootstrap Diode
  • Negative VS transient immunity of 100 V
  • Over current & under voltage protection
  • Multi-function RFE pin functionality
  • Less than 100 ns propagation delay
  • DSO-8 package
  • RoHS compliant

Benefits

  • Excellent ruggedness and noise immunity
  • High current output stage
  • Power switch protection integrated
  • Fault feedback provided

Documents

Design resources

Developer community

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