FF6MR12KM1H Half-bridge 1200 V CoolSiC™ MOSFET Module
Overview
62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
Summary of Features
- High current density
- Low switching losses
- Superior gate oxide reliability
- Robust integrated body diode
- High cosmic ray robustness
- High speed switching module
- Symmetrical module design
- Standard construction technique
Benefits
- Minimizes cooling efforts
- Reduction in volume and size
- Reduced system costs
Diagrams
Support
