AIMBG120R080M1 Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in D2PAK-7L, 80mΩ
Overview
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Summary of Features
- Revolutionary semiconductor material - Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- Commutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
- Sense pin for optimized switching performance
- Suitable for HV creepage requirements
- XT interconnection technology for best-in-class thermal performance
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
Potential Applications
Diagrams
Rdson: 1200V PPOS
9mOhm: AIMBG120R010M1
20mOhm: AIMBG120R020M1
30mOhm: AIMBG120R030M1
40mOhm: AIMBG120R040M1
60mOhm: AIMBG120R060M1
80mOhm: AIMBG120R080M1
120mOhm: AIMBG120R120M1
160mOhm: AIMBG120R160M1
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