600 V CoolMOS™ 8
The high voltage super-junction MOSFET family combining the best out of the 600 V CoolMOS™ 7 families
Infineon's newest CoolMOS™ 8 at 600 V is leading the way in high voltage super-junction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale.
The series is equipped with an integrated fast body diode, making it suitable for a wide range of applications. It is enhancing Infineon’s WBG offering and the successor of the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7, G7 and PFD7
The 600 V CoolMOS™ 8 SJ MOSFET comes with reduced gate charge (Qg) of 18% over CFD7 and 33% over P7 at 10V, 50% lower COSS than CFD7 and P7 at 400V, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7 and P7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. The Rth thermal performance also improved with 14-42% comparing previous generation.
Due to these features the devices offer highest efficiency and best-in-class reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. Furthermore, it offers an outstanding level of performance in PFC, TTF and other hard-switching topologies. In addition, the 600 V CoolMOS™ 8 SJ MOSFETs enable higher power density thanks to its optimized RDS(on) which allows us to bring our best in class (BiC) products down to a single digit of 7mΩ in a Si based super junction (SJ) technology.
The 600 V CoolMOS™ 8 SJ MOSFETs series is an “all in MOSFET” technology addressing industrial and consumer applications. Thanks to its integrated fast body diode, it enables usage of one MOSFET family across all main topologies in the targeted markets. It enables cost attractive Si-based solutions enhancing Infineon’s high voltage wide band gap offerings.
The portfolio has innovative SMD QDPAK, TOLL, ThinTOLL 8x8 package offering to enable the simplification and assembly cost reduction.
| Features | Benefits |
| World class RDS(on)*A | 0.17% efficiency gain over P7, and 0.05% over C7 |
| Integrated fast body diode | Ease of use and fast design-in |
| Excellent commutation ruggedness | Low ringing tendency |
| Advanced interconnect technology | 14-42% lower Rth |
| Gradual portfolio including from 7mΩ | Simplified portfolio |
| Top Side Cooling Packages | System level innovation |
