IR44252L

Overview

For new designs, we recommend IRS44273L

Low Side Driver IC with typical 0.3 A source and 0.55 A sink currents in 5 Lead SOT23 package for IGBTs and MOSFETs.

IR44252L is a low voltage, non-inverting gate driver. Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output driver features a wide VCC range, under-voltage lockout with hysteresis, and output current buffer stage. Also, the IR44252L is complimentary to the popular IRS25752 SOT-23 single high-side driver IC.

Summary of Features

  • Compact µHVIC ™
  • Wide VCC range (5 V to 20 V)
  • CMOS Schmitt-triggered inputs
  • Under voltage lockout
  • 3.3 V logic compatible
  • Additional OUT pin
  • Output in phase with inputs
  • Lead free, RoHS compliant

Potential Applications

Find our Variations

1ED44176N01F: 25 V, 0.8/1.75 A, 11.9/11.4 V UVLO, with OCP, EN, FAULT, in DSO-8 package

IRS44273L: 25 V, 1.5/1.5 A, 10.2/9.2 V UVLO, with additional OUT pin, in SOT23-5 package

IR44252L: 20 V, 0.3/0.55 A, 5/4.15 V UVLO, with additional OUT pin, in SOT23-5 package

IR44272L: 20 V, 1.7/1.5 A, 5/4.15 V UVLO, with Enable, in SOT23-5 package

IR44273L: 20 V, 1.7/1.5 A, 5/4.15 V UVLO, with additional OUT pin, in SOT23-5 package

Diagrams
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

Training

How to choose gate driver for IGBT discretes and modules

30:25

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

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