1ED020I12-F2

Overview

1200 V single high-side isolated gate driver IC with active Miller clamp, DESAT and short circuit clamping

1ED020I12-F2 is a galvanic isolated single channel gate driver in DSO-16 wide body package that provides an output current capability of typically 2 A. All logic pins are 5V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology. The 1ED-F2 provides several protection features like IGBT desaturation protection, active Miller clamping, and active shut down.

Summary of Features

  • Single channel isolated gate driver IC (1ED-F2)
  • For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
  • 2 A rail-to-rail typical output current
  • Precise DESAT protection, VCEsat detection
  • Active Miller Clamp
  • Active shutdown and Short circuit clamping
  • 28 V absolute Max. output supply voltage
  • 170/165 ns typ. propagation delay
  • 12/11 V output UVLO
  • ≥ 100 kV/µs CMTI

Benefits

  • Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
  • Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • Wide body package with 8 mm creepage distance
  • Immunity against negative and positive transients, increases reliability of the end product
  • Low power losses for switching frequencies into MHz range

Potential Applications

 

Diagrams
Tools & Software
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

1:41

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Training
29:16

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

30:25

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support