Strengthening the link between the real and the digital world1ED020I12-F2
1200 V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
EiceDRIVER™ 1200 V high-side gate driver with typical 2 A source and 2 A sink currents in DSO-16 wide body package for IGBTs. All logic pins are 5 V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology.
Summary of Features
- Single channel isolated gate driver IC (1ED-F2)
- For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
- 2 A rail-to-rail typical output current
- Precise DESAT protection, VCEsat detection
- Active Miller Clamp
- Active shutdown and short circuit clamping
- 28 V absolute max. output supply voltage
- 170/165 ns typ. propagation delay
- 12/11 V output UVLO
- ≥ 100 kV/µs CMTI
Benefits
- Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
- Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
- Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
- Wide body package with 8 mm creepage distance
- Immunity against negative and positive transients, increases reliability of the end product
- Low power losses for switching frequencies into MHz range
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
