1ED020I12-F2

Overview

1200 V single high-side isolated gate driver IC with active Miller clamp, DESAT and short circuit clamping

EiceDRIVER™ 1200 V high-side gate driver with typical  2 A source and 2 A sink currents in DSO-16 wide body package for IGBTs. All logic pins are 5 V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology.

Summary of Features

  • Single channel isolated gate driver IC (1ED-F2)
  • For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
  • 2 A rail-to-rail typical output current
  • Precise DESAT protection, VCEsat detection
  • Active Miller Clamp
  • Active shutdown and Short circuit clamping
  • 28 V absolute Max. output supply voltage
  • 170/165 ns typ. propagation delay
  • 12/11 V output UVLO
  • ≥ 100 kV/µs CMTI

Benefits

  • Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
  • Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • Wide body package with 8 mm creepage distance
  • Immunity against negative and positive transients, increases reliability of the end product
  • Low power losses for switching frequencies into MHz range
Diagrams
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

1:41

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Training

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Si, SiC or GaN? The right choice for power devices

Infineon on demand webminar Si, SiC or GaN?

 

Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.

Click to see more
30:25

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support