Server power supply units (PSU)

Explore Infineon's end-to-end semiconductor solutions to design efficient server PSU systems for high-demand AI data center workloads

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Overview

Infineon end-to-end server PSU solutions leverage a hybrid Si, SiC, GaN portfolio for modern AI data centers. This enables up to 97.5% peak efficiency and a compact system design, utilizing topologies like high-frequency LLC and bridgeless PFC. With global manufacturing capabilities and a “zero-defect” mindset across the product lifecycle, Infineon enables reliable, scalable, and space-efficient server PSU designs for high-density AI data centers.

Benefits

  • End-to-end server PSU solutions
  • Holistic multi-technology portfolio
  • GaN & SiC for optimal performance
  • Bridgeless PFC with CoolSiC™
  • High-frequency LLC with CoolGaN™
  • High-density server PSU designs
  • High peak efficiency (97.5%)
  • Wide range of input/output power

About

Server power supply units (PSU) are critical to delivering stable and efficient power in modern server and data center infrastructure. As compute workloads grow, the requirement for power density and efficiency in server SMPS also continue to increase. 

Designing high-performance server PSUs for modern AI workloads requires coordinated optimization across multiple power conversion stages. Infineon provides a holistic approach to the server power chain, with end-to-end portfolio of power semiconductors, control ICs, and MCUs used across modern server SMPS designs.

What are Infineon’s key offerings for server PSU designs?  

  • CoolMOS™ high-voltage MOSFETs for reliability and performance
  • OptiMOS™ low-voltage MOSFETs to minimize conduction losses
  • CoolSiC™ MOSFETs for thermal efficiency  
  • CoolGaN™ transistors for high power density
  • EiceDRIVER™ gate drivers for fast switching
  • XMC™ MCUs for precise digital control
  • CoolSET™ auxiliary controllers for reliable standby

Together, these technologies enable optimized server SMPS power architectures, supporting higher efficiency, power density, and scalable power delivery for next-generation AI data centers.

The rapid advancement of LLMs and Gen AI has shifted data center architecture toward the "AI factory" model – where massive compute clusters require unprecedented power levels within a shrinking physical footprint. This has significantly increased power demand in modern data centers, placing greater strain on server PSUs.

Modern data center PSU designs must minimize energy losses while maximizing power density to support growing compute capacity within limited rack space, necessitating a departure from traditional silicon-only designs.

How to enable high-density server PSU designs for AI data centers with Infineon's SiC and GaN?

Infineon’s wide bandgap technologies, such as SiC (CoolSiC™) and GaN (CoolGaN™), are the primary drivers of this transformation, offering groundbreaking solutions setting new industry benchmarks in server PSU designs for AI data centers.

By leveraging these advancements, data center operators can transition to high-density rack configurations that are not only more powerful but also more energy-efficient and scalable for the next generation of AI infrastructure.

Compared to conventional Si devices, wide bandgap semiconductors (SiC and GaN) support faster switching, lower switching losses, and improved thermal performance ideal for server PSU designs used in AI data centers.

CoolSiC™ MOSFETs provide high efficiency with robustness and reliability. Beyond performance increases, they offer industry-leading gate oxide reliability and a body diode rated for hard commutation. They also provide integrated avalanche capability and a wide VGS range with 0 V turn-off, enabling a simplified, reliable control in server SMPS architectures.

CoolGaN™ transistors enable very fast switching and excellent FOMs. With a 10x higher breakdown field and significantly higher mobility compared to silicon, GaN enables near-lossless switching with zero reverse recovery charge, enabling high-frequency topologies that shrink the footprint of passive components. This enables smaller, lighter server PSU designs with lower system cost for data center operators.

Infineon provides a dedicated ecosystem of EiceDRIVER™ gate drivers optimized to match the unique switching characteristics of these devices, ensuring precision and protection in high-density server PSUs.

Infineon’s extensive range of power device technologies (Si, SiC, and GaN) combined with optimized gate-driver ICs, delivers robust support for current and next-generation platforms. By integrating these three technologies in a hybrid approach, PSU designs achieve optimal flexibility while balancing efficiency, power density, and system costs.

Infineon’s comprehensive portfolio of Si, SiC, and GaN allows engineers to move beyond a "one-size-fits-all" design philosophy. By adopting a strategic hybrid approach, server PSU designers can deploy the most effective technology for each specific stage of the power conversion chain depending on voltage level, switching frequency, and efficiency requirements. For example, using Si devices where cost-efficiency is critical, SiC devices for high-voltage efficiency, and GaN devices for high-frequency switching stages.

This flexibility allows server PSU designs for AI and data center applications to balance efficiency, power density, thermal performance, and system cost while supporting evolving server power requirements.

Server power supply units (PSU) are critical to delivering stable and efficient power in modern server and data center infrastructure. As compute workloads grow, the requirement for power density and efficiency in server SMPS also continue to increase. 

Designing high-performance server PSUs for modern AI workloads requires coordinated optimization across multiple power conversion stages. Infineon provides a holistic approach to the server power chain, with end-to-end portfolio of power semiconductors, control ICs, and MCUs used across modern server SMPS designs.

What are Infineon’s key offerings for server PSU designs?  

  • CoolMOS™ high-voltage MOSFETs for reliability and performance
  • OptiMOS™ low-voltage MOSFETs to minimize conduction losses
  • CoolSiC™ MOSFETs for thermal efficiency  
  • CoolGaN™ transistors for high power density
  • EiceDRIVER™ gate drivers for fast switching
  • XMC™ MCUs for precise digital control
  • CoolSET™ auxiliary controllers for reliable standby

Together, these technologies enable optimized server SMPS power architectures, supporting higher efficiency, power density, and scalable power delivery for next-generation AI data centers.

The rapid advancement of LLMs and Gen AI has shifted data center architecture toward the "AI factory" model – where massive compute clusters require unprecedented power levels within a shrinking physical footprint. This has significantly increased power demand in modern data centers, placing greater strain on server PSUs.

Modern data center PSU designs must minimize energy losses while maximizing power density to support growing compute capacity within limited rack space, necessitating a departure from traditional silicon-only designs.

How to enable high-density server PSU designs for AI data centers with Infineon's SiC and GaN?

Infineon’s wide bandgap technologies, such as SiC (CoolSiC™) and GaN (CoolGaN™), are the primary drivers of this transformation, offering groundbreaking solutions setting new industry benchmarks in server PSU designs for AI data centers.

By leveraging these advancements, data center operators can transition to high-density rack configurations that are not only more powerful but also more energy-efficient and scalable for the next generation of AI infrastructure.

Compared to conventional Si devices, wide bandgap semiconductors (SiC and GaN) support faster switching, lower switching losses, and improved thermal performance ideal for server PSU designs used in AI data centers.

CoolSiC™ MOSFETs provide high efficiency with robustness and reliability. Beyond performance increases, they offer industry-leading gate oxide reliability and a body diode rated for hard commutation. They also provide integrated avalanche capability and a wide VGS range with 0 V turn-off, enabling a simplified, reliable control in server SMPS architectures.

CoolGaN™ transistors enable very fast switching and excellent FOMs. With a 10x higher breakdown field and significantly higher mobility compared to silicon, GaN enables near-lossless switching with zero reverse recovery charge, enabling high-frequency topologies that shrink the footprint of passive components. This enables smaller, lighter server PSU designs with lower system cost for data center operators.

Infineon provides a dedicated ecosystem of EiceDRIVER™ gate drivers optimized to match the unique switching characteristics of these devices, ensuring precision and protection in high-density server PSUs.

Infineon’s extensive range of power device technologies (Si, SiC, and GaN) combined with optimized gate-driver ICs, delivers robust support for current and next-generation platforms. By integrating these three technologies in a hybrid approach, PSU designs achieve optimal flexibility while balancing efficiency, power density, and system costs.

Infineon’s comprehensive portfolio of Si, SiC, and GaN allows engineers to move beyond a "one-size-fits-all" design philosophy. By adopting a strategic hybrid approach, server PSU designers can deploy the most effective technology for each specific stage of the power conversion chain depending on voltage level, switching frequency, and efficiency requirements. For example, using Si devices where cost-efficiency is critical, SiC devices for high-voltage efficiency, and GaN devices for high-frequency switching stages.

This flexibility allows server PSU designs for AI and data center applications to balance efficiency, power density, thermal performance, and system cost while supporting evolving server power requirements.

Documents

Design resources

Developer community

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