SIDC32D170H

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SIDC32D170H
SIDC32D170H

Product details

  • I(FSM) max
    100 A
  • IF max
    50 A
  • IR max
    250 µA
  • Irrm
    62 A
  • Technology
    Emitter Controlled Diode 3
  • VDS max
    1700 V
  • VF
    1.8 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Features

  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient

Applications

Documents

Design resources

Developer community

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