Active and preferred

S29GL01GT10FAI013

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL01GT10FAI013
S29GL01GT10FAI013
Data Sheet

Product details

  • Density
    1 GBit
  • Family
    GL-T
  • Initial Access Time
    100 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S29GL01GT10FAI013
Product Status active and preferred
Infineon Package
P-LFBGA-64
Package Name FBGA-64 (002-15536)
Packing Size 1600
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
P-LFBGA-64
Package Name FBGA-64 (002-15536)
Packing Size 1600
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL01GT10FAI013 is a 1 Gb (128 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with 3.0 V core operation and I/O voltage from 1.65 V to 3.6 V. It offers 100 ns random access, 15 ns page access, and a 512-byte programming buffer for fast writes. Supporting ×8/×16 data bus, 128-KB uniform sectors, advanced sector protection, and internal ECC, it ensures high reliability and robust data integrity for embedded, automotive, and industrial applications.

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Benefits

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }