S25FS064SAGBHM023
Active and preferred
RoHS Compliant
Lead-free

S25FS064SAGBHM023

64 Mbit Density | Quad SPI Interface | 1.8 V Operating Voltage | -40°C to +125°C OperatQing Temperature | Automatic ECC
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S25FS064SAGBHM023
S25FS064SAGBHM023
Datasheet


Product details

  • Classification
    ISO 26262-ready
  • Density
    64 MBit
  • Family
    FS-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive

Recommended
OPN
S25FS064SAGBHM023
Product Status active and preferred
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
The S25FS064SAGBHM023 is a 64 Mb (8 MB) automotive-grade, AEC-Q100 Grade 1 SPI NOR Flash operating at 1.7–2.0 V and –40°C to +125°C. It supports 133 MHz SDR/80 MHz DDR, Single/Dual/Quad I/O, up to 80 MB/s DDR quad read. Built on 65 nm MIRRORBIT™, it offers 100k P/E cycles, 20-year retention, hybrid/uniform sectors, sector protection, and a 1024-byte OTP region.

Features

  • SPI: single/dual/quad/QPI modes
  • Double data rate (DDR) read commands
  • 256/512-byte page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 1024-byte OTP, lockable regions
  • Automatic ECC with single bit error
  • Advanced sector and block protection
  • 65-nm MIRRORBIT™ technology
  • 1.7 V to 2.0 V supply voltage
  • Operating temperature up to +125°C

Benefits

  • Flexible I/O enables fast data access
  • DDR read boosts system performance
  • Large buffer accelerates programming
  • Multiple erase modes for various needs
  • High endurance for reliable operation
  • Long retention secures critical data
  • OTP array supports secure device ID
  • ECC improves data integrity
  • Robust protection prevents data loss
  • Advanced process enables high density
  • Low voltage cuts power consumption
  • Wide temp range suits harsh environments

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