Active and preferred
RoHS Compliant
Lead-free

S25FL128SAGMFB010

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S25FL128SAGMFB010
S25FL128SAGMFB010

Product details

  • Classification
    ISO 26262-ready
  • Density
    128 MBit
  • Family
    FL-S
  • Interface Bandwidth
    52 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
OPN
S25FL128SAGMFB010
Product Status active and preferred
Infineon Package
Package Name SOIC-16 (002-15547)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name SOIC-16 (002-15547)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL128SAGMFB010 is a 128 Mb SPI Multi-I/O NOR flash memory utilizing 65-nm MIRRORBIT™ technology and Eclipse architecture. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it supports automotive temperature ranges up to 125°C (AEC-Q100 Grade 1). Maximum read speeds reach 52 MBps (Quad) and 80 MBps (Quad DDR). Security features include OTP and block protection. Ideal for code shadowing, XIP, and embedded storage, it offers high endurance and 20-year retention.

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • SDR and DDR read modes up to 80 MBps
  • Page programming buffer: 256B/512B options
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector and block protection features
  • Core voltage: 2.7 V to 3.6 V, I/O: 1.65 V to
  • Operating temp: –40°C to +125°C

Benefits

  • High density, reliable code and data storage
  • Fast erase/program boosts system performance
  • Flexible I/O supports wide host compatibility
  • High-speed read enables XIP applications
  • Efficient page buffer speeds up programming
  • Multiple erase options ease legacy migration
  • Long endurance reduces maintenance needs
  • Data retention ensures long-term reliability
  • OTP region enhances system security
  • Robust protection prevents data corruption
  • Wide voltage range fits diverse systems
  • Broad temp range suits harsh environments

Applications

Documents

Design resources

Developer community

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