S25FL127SABMFV000

S25FL127SABMFV000

Datasheet
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S25FL127SABMFV000
S25FL127SABMFV000
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S25FL127SABMFV000 is a 128 Mb (16 MB) SPI Multi-I/O NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture. It supports single, dual, and quad SPI commands, operates from 2.7 V to 3.6 V, and withstands temperatures up to 125°C (AEC-Q100 Grade 1). Quad mode enables read speeds up to 54 MBps at 108 MHz. With 100,000 program-erase cycles per sector and 20-year data retention, it is ideal for code shadowing, XIP, and automotive or industrial data storage.

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

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