S25FL127SABMFI000

S25FL127SABMFI000

Datasheet
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FL127SABMFI000
S25FL127SABMFI000
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S25FL127SABMFI000 is a 128 Mb (16 MB) SPI NOR flash memory using 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports single, dual, and quad SPI I/O up to 108 MHz, with 2.7 V to 3.6 V supply and AEC-Q100 Grade 1 (–40°C to +125°C) operation. Features include 100,000 program-erase cycles per sector, 20-year data retention, automatic ECC, flexible sector options, advanced protection, and a 1024-byte OTP security area.

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

Applications

Documents

Design resources

Partner solutions

Developer community