Active and preferred

JANSR2N7626UB

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

JANSR2N7626UB
JANSR2N7626UB
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    2
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    -0.33 A
  • ID (@25°C) max
    -0.53 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UB
  • Polarity
    P
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7626UB
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    1300 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    -60 V
  • VF max
    -5 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
JANSR2N7626UB P-channel MOSFET is rad hard, with -60V and -0.53A, in a single UB package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R7 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }