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JANSF2N7664T1

From -30 V to -200 V, DLA-qualified for space applications

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JANSF2N7664T1
JANSF2N7664T1

Product details

  • Die Size
    6
  • ESD Class
    Class B
  • Generation
    R9
  • ID (@25°C) max
    -100 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    P
  • QG
    221 nC
  • QPL Part Number
    2N7664U2A
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    9 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -60 V
  • VF max
    -1.3 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Rad hard, -60V, -45A, P-channel MOSFET, R9 in TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened (up to LET of 92.4 MeV·cm2 /mg)
  • Low RDS(on)
  • Improved SOA for linear mode operation
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • ESD rating: Class 3B per MIL-STD-750, Method 1020

Benefits

  • DC-DC converter
  • Motor drives
  • Power distribution
  • Latching current limiter

Applications

Documents

Design resources

Developer community

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