JANSF2N7661T3
NEW
Active and preferred

JANSF2N7661T3

NEW
Rad Hard, -200 V, -14 A, MOSFET in Low-Ohmic TO-257AA - 300 krad TID, JANS
Datasheet
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JANSF2N7661T3
JANSF2N7661T3
Datasheet


Product details

  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@25°C) max
    -14 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    Low-Ohmic TO-257AA
  • Polarity
    P
  • QG
    49 nC
  • Qualification
    JANS
  • RDS (on) (@25°C) max
    175 Ω
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V

Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free Yes
RoHS Compliant No

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSF2N7661T3 is a R9 superjunction, rad hard, single P-channel MOSFET in a Low-Ohmic TO-257AA package that can handle -200 V and -14 A. It is well suited for space applications as its combination of low RDS(on), and improved SOA will allow for better performance in applications such as DC-DC converters or motor drives.

Features

  • Improved SOA for linear mode operation
  • Low RDS(on)
  • Improved avalanche energy
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • ESD rating: class 2 (MIL-STD-750, 1020)
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