JANSF2N7588T3
Active and preferred

JANSF2N7588T3

JANSF2N7588T3 JANS N-channel MOSFET is a single, radiation-hardened device ideal for space applications.
Datasheet
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JANSF2N7588T3
JANSF2N7588T3
Datasheet


Product details

  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@25°C) max
    20 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • QG
    50 nC
  • QPL Part Number
    2N7588T3
  • Qualification
    JANS
  • RDS (on) (@25°C) max
    0.042 Ω
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V

Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSF2N7588T3 JANS N-channel MOSFET is a single, radiation-hardened device ideal for space applications. It operates at 100 V and 20 A, with low RDS(on) and low gate charge, resulting in reduced power losses. Its electrical performance is up to 300 krad(Si) TID, making it highly reliable. The TO-257AA tabless low ohmic package offers improved thermal performance.

Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Low Total Gate Charge
  • Fast Switching
  • Simple Drive Requirements
  • Hermetically Sealed
  • Electrically Isolated
  • Ceramic Eyelets
  • Light Weight
  • ESD Rating: Class 1C (MIL-STD-750, 1020)

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