ISZ0501NLS

OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs
Data Sheet

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ISZ0501NLS
ISZ0501NLS
Data Sheet

Product details

  • Ciss
    910 pF
  • Coss
    390 pF
  • ID max
    40 A
  • IDpuls max
    160 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    PQFN 3.3 x 3.3 Fused Lead
  • Polarity
    N
  • Ptot
    30 W
  • QG (typ @4.5V)
    6.3 nC
  • QG (typ @10V)
    13.6 nC
  • RDS (on) (@10V) max
    3.1 mΩ
  • RDS (on) (@4.5V LL) max
    3.9 mΩ
  • RDS (on) (@4.5V) max
    3.9 mΩ
  • RthJA max
    60 K/W
  • RthJC max
    4.1 K/W
  • Rth
    4.1 K/W
  • VDS max
    25 V
  • VGS(th)
    1.2 V to 2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.Click here to view full portfolio .

Features

  • Logic level
  • Low on-state resistance (RDS(on))
  • Low gate, output and reverse recovery charge
  • Excellent thermal behavior

Benefits

  • Quick quote response
  • Highest efficiency and power density designs
  • Compact, lightweight and environmentally friendly products
  • Excellent price-performance ratio

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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