ISCH69N04LM7SC
NEW
Active and preferred
RoHS Compliant

ISCH69N04LM7SC

NEW
OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package

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ISCH69N04LM7SC
ISCH69N04LM7SC


Product details

  • ID (@25°C) max
    380 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6 DSC
  • Polarity
    N
  • QG (typ @10V)
    32 nC
  • RDS (on) (@4.5V) max
    0.9 mΩ
  • RDS (on) (@10V) max
    0.69 mΩ
  • Special Features
    Dual-Side Cooling
  • VDS max
    40 V
  • VGS(th) range
    1.1 V to 1.7 V
  • VGS(th)
    1.4 V

OPN
ISCH69N04LM7SCATMA1
Product Status active and preferred
Infineon Package
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s latest OptiMOS™ 7 40 V switching-optimized MOSFET delivers a new level of efficiency for power conversion. Compared to the previous-generation OptiMOS™ 6 BSC007N04LS6SC, it achieves up to 56% lower Qgd, 36% better RDS(on) 4,5 × Qg FOM and 24% lower QOSS, enabling lower switching losses, higher switching frequencies and increased power density in high power DC-DC converters, HVIBC and 48 V conversion.

Features

  • Switching-optimized OptiMOS™ 7
  • 56% lower Qgd vs. 0.7 mΩ OptiMOS™ 6
  • -36% RDS(on)×Qg FOM vs. 0.7mΩ OptiMOS™ 6
  • -29% Qg vs. 0.7 mΩ OptiMOS™ 6
  • -24% Qoss vs. 0.7 mΩ OptiMOS™ 6
  • 380 A current capability
  • GaN-drive compatible

Benefits

  • Maximize efficiency and power density
  • Minimize switching losses and EMI
  • Increase power density
  • Reduce gate-drive losses
  • Improve soft-switching efficiency
  • Support demanding conversion stages
  • Future-proof platform designs
Documents

Design resources

Developer community