ISCH65N04LM7SC
NEW
Active and preferred
RoHS Compliant

ISCH65N04LM7SC

NEW
OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package
Datasheet
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ISCH65N04LM7SC
ISCH65N04LM7SC
Datasheet


Product details

  • ID (@25°C) max
    424 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6 DSC
  • Polarity
    N
  • Qgd
    5.8 nC
  • QG (typ @4.5V)
    39 nC
  • QG (typ @10V)
    84 nC
  • RDS (on) (@10V) max
    0.65 mΩ
  • RDS (on) (@4.5V) max
    0.83 mΩ
  • Special Features
    Dual-Side Cooling
  • VDS max
    40 V
  • VGS(th) range
    1.1 V to 1.7 V
  • VGS(th)
    1.4 V

Recommended
OPN
ISCH65N04LM7SCATMA1
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT
Infineon’s latest OptiMOS™ 7 ISCH65N04LM7SC 40 V MOSFET combines low 0.65 mΩ RDS(on) with outstanding switching performance to maximize efficiency in high power systems. Featuring only 39 nC Qg at 4.5 V and 94 nC QOSS, it enables lower switching losses, higher switching frequencies and increased power density. Optimized for GaN-compatible gate drive voltages, it is ideal for high current DC-DC, IBC and 48 V conversion.

Features

  • Switching-optimized OptiMOS™ 7
  • Low 0.65 mΩ RDS(on)
  • 424 A current capability
  • -17% lower Qg vs. 0.7 mΩ OptiMOS™ 6
  • -49% lower Qgd vs. 0.7 mΩ OptiMOS™ 6
  • -9% lower Qoss vs 0.7 mΩ OptiMOS™ 6
  • Logic-level gate drive
  • GaN-drive compatible
  • High-frequency optimized
  • Low thermal resistance

Benefits

  • Maximize efficiency and power density
  • Minimized conduction losses
  • Enable maximum power output
  • Reduce gate-drive losses*
  • Accelerate switching speed*
  • Improved efficiency*
  • Simplify system integration
  • Future-proof platform designs
  • Increase power density
  • Enable cooler operation
  • *vs. 0.7 mΩ OptiMOS™ 6
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