Active and preferred
RoHS Compliant

ISC037N13NM6

OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package
ea.
in stock

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ISC037N13NM6
ISC037N13NM6
ea.

Product details

  • Budgetary Price €/1k
    1.78
  • ID (@25°C) max
    172 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @10V)
    82 nC
  • RDS (on) (@10V) max
    3.7 mΩ
  • Special Features
    Fused leads
  • VDS max
    135 V
  • VGS(th)
    3 V
OPN
ISC037N13NM6ATMA1
Product Status active and preferred
Infineon Package
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS. Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38% reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.

Features

  • Up to 48% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Benefits

  • Size reduction enabled with SuperSO8 best-in-class
  • System cost reduction
  • Less paralleling required
  • Reduced VDS overshoot & switching losses
  • Higher power density designs

Applications

Documents

Design resources

Developer community

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