Active and preferred

IRHYS9A93230CM

Data Sheet
package

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IRHYS9A93230CM
IRHYS9A93230CM
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    2
  • Generation
    R9
  • ID (@25°C) max
    -14 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    P
  • QG
    49 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    175 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free Yes
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHYS9A93230CM P-channel MOSFET is rad hard, with -200V and -14A, in a singleTO-257AA low ohmic package with electrical performance up to 300krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }