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IRHYB9A93230CM

Data Sheet
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IRHYB9A93230CM
IRHYB9A93230CM
Data Sheet

Product details

  • Die Size
    3
  • ESD Class
    2
  • Generation
    R9
  • ID (@25°C) max
    -14 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    Tabless TO-257A
  • Polarity
    P
  • QG
    49 nC
  • QPL Part Number
    2N7661D5
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    175 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHYB9A93230CM P-channel MOSFET is rad hard, with -200V and -14A, in a single TO-257AA Tabless package with electrical performance up to 300krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

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