Active and preferred

IRHYB67230CMSCV

Data Sheet
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IRHYB67230CMSCV
IRHYB67230CMSCV
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    10 A
  • ID (@25°C) max
    16 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Tabless Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    42 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    130 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO257-3
Package Name TO-257 TABLESS LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
R6 N-channel MOSFET IRHYB67230CMSCV offers a maximum voltage of 200V and a maximum current of 16A. Rad hard, this QIRL rated device has electrical performance of up to 100krad(Si) TID. It's housed in TO-257AA tabless low ohmic package and is ideal for space and radiation-sensitive applications. Low RDS(on) and low gate charge ensure high efficiency in switching applications.

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