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IRHNJ67134B
Product details
-
ConfigurationDiscrete
-
Die Size3
-
ESD ClassClass 2
-
GenerationR6
-
ID (@100°C) max12 A
-
ID (@25°C) max19 A
-
LanguageSPICE
-
Optional TID Rating (kRad(si))100 300
-
PackageSMD-0.5
-
PolarityN
-
Product CategoryRad hard MOSFETS
-
QG50 nC
-
QPL Part Number2N7589U3
-
QualificationCOTS
-
RDS (on) (@25°C) max88 mΩ
-
TID max100 Krad(Si)
-
VBRDSS150 V
-
VF max1.2 V
-
Voltage Class100 V
| Recommended | |
|
OPN
|
|
| Product Status | active and preferred |
| Infineon Package | |
| Package Name | SMD-0.5 LF, Au lead finish |
| Packing Size | N/A |
| Packing Type | N/A |
| Moisture Level | N/A |
| Moisture Packing | N/A |
| Lead-free | No |
| Halogen Free | No |
| RoHS Compliant | Yes |
|
|
|
| Product Status |
Active
|
|---|---|
| Infineon Package | |
| Package Name | SMD-0.5 LF, Au lead finish |
| Packing Size | 0 |
| Packing Type | |
| Moisture Level | - |
| Moisture Packing | |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
IRHNJ67134B R6 N-channel MOSFET is a single, 150V, 19A device in a SMD-0.5 package. Radiation-hardened, it has electrical performance up to 100krad(Si) TID with improved immunity to Single Event Effect. Its low RDS(on) and faster switching times make it ideal for high speed switching applications, including DC-DC converters and motor controllers.
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