Active and preferred
RoHS Compliant

IRHNJ67130SCSB

Data Sheet
package

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IRHNJ67130SCSB
IRHNJ67130SCSB
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • Download Model
    https://www.infineon.com/cms/dgdl/Infineon-Spice_File_IRHNJ67130-SimulationModels-v01_01-EN.spi?fileId=8ac78c8c84f2c0670184f4f48da911fe
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    19 A
  • ID (@25°C) max
    22 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7587U3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    42 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.5 LF, Au lead finish
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.5 LF, Au lead finish
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNJ67130SCSB R6 N-channel MOSFET is a highly reliable, radiation-hardened device designed for space applications. With a 100V rating and 3.4A current capability, this MOSFET features improved immunity to Single Event Effect and is characterized for useful performance with LET up to 90MeV/mg/cm². With low RDS(on) and faster switching times, this MOSFET reduces power loss and increases power density in high-speed switching applications.

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