not for new design

IRHLNMC7S3214

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNMC7S3214
IRHLNMC7S3214
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    2 A
  • ID (@25°C) max
    3.2 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    13 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1100 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLNMC7S3214 R7 MOSFET is a rad hard, 250V, 3.2A N-channel MOSFET in a SMD-0.2 package. It has electrical performance up to 300krad(Si) TID classification. It provides a simple solution for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments, maintaining single event gate rupture. The threshold voltage remains within acceptable operating limits over the full temperature range.

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