IRFU9120N

-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Data Sheet

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IRFU9120N
IRFU9120N
Data Sheet

Product details

  • ID max
    -6.5 A
  • ID (@ TC=25°C) max
    -6.5 A
  • ID (@ TC=100°C) max
    -4.1 A
  • Mounting
    THT
  • Package
    IPAK (TO-251)
  • Polarity
    P
  • Ptot max
    39 W
  • Qgd
    10 nC
  • QG
    18 nC
  • RDS (on) (@10V) max
    480 mΩ
  • RDS (on) max
    480 mΩ
  • RthJC max
    3.2 K/W
  • Tj max
    150 °C
  • VDS max
    -100 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
  • P-Channel MOSFET

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }