IRFH7188

100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B/E package
Data Sheet

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IRFH7188
IRFH7188
Data Sheet

Product details

  • ID (@ TC=100°C) max
    66 A
  • ID (@ TA=25°C) max
    18 A
  • ID max
    66 A
  • ID (@ TC=25°C) max
    105 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 5 x 6 B
  • Polarity
    N
  • Ptot max
    132 W
  • Ptot (@ TA=25°C) max
    3.8 W
  • Qgd
    11 nC
  • QG
    33 nC
  • RDS (on) max
    6 mΩ
  • RDS (on) (@10V) max
    6 mΩ
  • RthJC max
    0.95 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Low RDSon (less than 6.0mOhms)
  • Low Thermal Resistance to PCB (less than 0.95°C/W)
  • Low Profile (less than 1.05 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • RoHS Compliant
  • Halogen-Free
  • MSL 1
  • FastIRFET™

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Documents

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