IRFH5302D

30V Single N-Channel StrongIRFET™ Power MOSFET with integrated Schottky Diode in a PQFN 5x6mm PQFN package
Data Sheet

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IRFH5302D
IRFH5302D
Data Sheet

Product details

  • ID (@25°C) max
    100 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    3.6 W
  • Qgd
    7.9 nC
  • QG (typ @4.5V)
    26 nC
  • RDS (on) (@10V) max
    2.5 mΩ
  • RDS (on) (@4.5V) max
    3.7 mΩ
  • RthJC max
    1.2 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th)
    1.8 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Industry standard surface-mount power package
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Benefits

  • Standard pinout allows for drop in replacement
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

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