IRF9910PBF-1

IRF9910PBF-1

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

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IRF9910PBF-1
IRF9910PBF-1


Product details

  • ID (@25°C) max
    10 A, 12 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    5.4 nC, 2.5 nC
  • QG (typ @4.5V)
    7.4 nC, 15 nC
  • RDS (on) (@10V) max
    9.3 mΩ, 13.4 mΩ
  • RDS (on) (@4.5V) max
    11.3 mΩ, 18.3 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS(th) range
    1.65 V to 2.55 V
  • VGS(th)
    2.1 V
  • VGS max
    20 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant

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