IRF7726

-30V Single P-Channel Power MOSFET in a Micro 8 package
Data Sheet

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IRF7726
IRF7726
Data Sheet

Product details

  • ID (@25°C) max
    -7 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    Micro8 (MO-187)
  • Polarity
    P
  • Ptot (@ TA=25°C) max
    1.79 W
  • Qgd
    8.1 nC
  • QG (typ @10V)
    46 nC
  • RDS (on) (@10V) max
    26 mΩ
  • RDS (on) (@4.5V) max
    40 mΩ
  • RthJA max
    70 K/W
  • Tj max
    150 °C
  • VDS max
    -30 V
  • VGS(th)
    -1.75 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Low profile package (less than 1.1mm)

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Compact form factor

Applications

Documents

Documents

Design resources

Partner solutions

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