IRF7506

-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package

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IRF7506
IRF7506

Product details

  • ID (@25°C) max
    -1.7 A
  • Moisture Sensitivity Level
    1
  • Package
    Micro8 (MO-187)
  • Polarity
    P+P
  • Ptot (@ TA=25°C) max
    1.25 W
  • Qgd (typ)
    2.5 nC
  • QG (typ @10V)
    7.5 nC
  • RDS (on) (@10V) max
    270 mΩ
  • RDS (on) (@4.5V) max
    450 mΩ
  • RthJA max
    100 K/W
  • Tj max
    150 °C
  • VDS max
    -30 V
  • VGS(th) min
    -1 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Fast Switching
  • Low Profile (less than 1.1mm)
  • Dual P-Channel MOSFET

Applications

Documents

Design resources

Developer community

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