IRF7301

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

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IRF7301
IRF7301

Product details

  • ID (@25°C) max
    5.7 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    5.3 nC
  • QG (typ @4.5V)
    13.3 nC
  • RDS (on) (@4.5V) max
    50 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS(th) min
    0.7 V
  • VGS max
    12 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N-Channel MOSFET

Applications

Documents

Design resources

Developer community

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