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IRF640NL
Product details
-
ID (@25°C) max18 A
-
MountingTHT
-
PackageI2PAK (TO-262)
-
PolarityN
-
Ptot max150 W
-
Qgd22 nC
-
QG (typ @10V)44.7 nC
-
RDS (on) (@10V) max150 mΩ
-
RthJC max1 K/W
-
Tj max175 °C
-
VDS max200 V
-
VGS(th) range2 V to 4 V
-
VGS(th)3 V
-
VGS max20 V
|
OPN
|
|---|
| Product Status |
| Infineon Package |
| Package Name |
| Packing Size |
| Packing Type |
| Moisture Level |
| Moisture Packing |
| Lead-free |
| Halogen Free |
| RoHS Compliant |
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Industry standard through-hole power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification level
- Standard pinout allows for drop in replacement
- High current carrying capability
Applications
Documents
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